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Quantum Nonlinear Acoustic Hall Effect and Inverse Acoustic Faraday Effect in Dirac Insulators.
Ying Su1, Alexander V Balatsky2,3, Shi-Zeng Lin1,4
1Los Alamos National Laboratory, Center for Integrated Nanotechnology, Los Alamos, New Mexico 87545, USA.
Physical Review Letters
|February 6, 2025
Summary
We demonstrate acoustic waves can induce quantum nonlinear Hall and inverse Faraday effects in Dirac insulators. These topological effects are quantized and tunable, offering potential for room-temperature acoustoelectric devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Topological insulators exhibit unique electronic properties governed by band topology.
- Dirac insulators possess a band structure with linear dispersion, similar to graphene.
- Acoustic waves can interact with electronic systems, potentially inducing novel phenomena.
Purpose of the Study:
- To investigate the realization of quantum nonlinear Hall and inverse Faraday effects using acoustic waves in Dirac insulators.
- To explore the role of intrinsic valley-contrasting band topology in these phenomena.
- To understand the tunability of topological currents and static magnetization via acoustic wave properties.
Main Methods:
- Theoretical modeling of acoustic wave interaction with time-reversal invariant, inversion-broken Dirac insulators.
- Analysis of acoustoelectric conductivity and magnetoacoustic susceptibility.
- Investigation of interband transition suppression at low acoustic frequencies.
Main Results:
- Quantum nonlinear Hall and inverse Faraday effects are shown to arise from band topology.
- Acoustoelectric conductivity and magnetoacoustic susceptibility are proportional to the quantized valley Chern number.
- Topological currents and static magnetization are tunable by acoustic wave polarization and propagation.
Conclusions:
- A quantized nonlinear topological acoustoelectric response is unveiled in gapped Dirac materials.
- The findings suggest potential for room-temperature acoustoelectric devices utilizing materials like hexagonal boron nitride and transition-metal dichalcogenides.
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