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Updated: May 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device
Yucheng Wang1, Ruixi Huang1, Wenyi Zhang2
1Research&Development Institute of Northwestern Polytechnical University in Shenzhen, Xi'an, China.
Abstract:
Triple cation halide perovskite (TCP) stands out as a superior photoelectric material, with a broader absorption range, higher absorption efficiency, and improved environmental stability. Due to its excellent synaptic plasticity, TCP facilitates advanced neural morphological operations like light-assisted learning. Here, a modifying layer of polythiophene (P3HT) was incorporated onto the TCP thin film to enhance the resistive switching (RS) characteristics of the synaptic device, which exhibits excellent stability (103 endurance cycles and > 103 s retention time) and low energy consumption (~ 6.3 pJ for electrical stimulus and ~ 6 pJ for optical stimulus). Additionally, the synaptic properties of the perovskite / P3HT heterojunction synaptic device were explored under optoelectric coordinated modulation, encompassing Long-Term Potentiation (LTP), Long-Term Depression (LTD), frequency-dependent plasticity (SRDP) and voltage-dependent plasticity (SVDP). By leveraging the linear characteristics of synaptic plasticity, arithmetic operations, Pavlovian conditioned reflex and vision recognition are achieved. The recognition accuracies of 89.8% / 88.1% (electric synapse) are enhanced to 92.4% / 92.2% after the introduction of optoelectronic cooperative stimulation on the 8 × 8 and 28 × 28 modified national institute of standards and technology (MNIST) handwritten digit datasets. This study holds significant implications for guiding the optoelectronic co-regulation of perovskite synaptic devices in the field of synaptic electronics.
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