Photoassisted Enhancement of Capacitance in the rGO-g-C3N4-ZnCo2O4 Heterojunction-Based Supercapacitor
Garima Gupta1, Samim Hossain1, Nasima Khatun1
1Semiconducting Oxide Materials, Nanostructures, and Tailored Heterojunctions (SOMNaTH) Lab, Functional Oxides Research Group (FORG), and 2D Materials Research and Innovation Centre; Department of Physics, Indian Institute of Technology Madras, Chennai, Tamil Nadu 600036, India.
Abstract:
The ever-increasing demand for renewable energy sources necessitates efficient methods for harvesting and storing clean energy. A photosupercapacitor is an energy storage device that shows improved charge storage performance in the presence of light, which is necessary to mitigate the current energy crisis. Here, we have presented rGO-g-C3N4-ZnCo2O4 as a photoelectrode for a photoassisted supercapacitor. Photoelectrode selection was based on the suitable relative energy level positions of each component. The sample was synthesized by hydrothermal and thermal exfoliation processes and characterized by XRD, SEM, DRS, and XPS. We have achieved a 25-30% enhancement in capacitance under illumination (1 Sun AM 1.5G). In addition, we have also analyzed diffusive and capacitive contributions exhibited by the sample in order to understand the charge storage mechanism. In order to analyze light-induced enhancement, PL and TRPL were conducted, which verify the transfer of photogenerated holes from g-C3N4 to ZnCo2O4. Hence, this work demonstrates a sustainable strategy for charge storage enhancement in next-generation energy storage devices.
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