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Control Over Metal-Halide Reactivity Enables Uniform Growth of InSb Colloidal Quantum Dots for Enhanced SWIR Light

Muhammad Imran1, Da Bin Kim1, Pan Xia1

  • 1Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON, M5S 3G4, Canada.

Advanced Materials (Deerfield Beach, Fla.)
|February 12, 2025
PubMed
Summary

Researchers developed new methods to synthesize indium antimonide (InSb) colloidal quantum dots (CQDs) for infrared sensing. These advancements enable tunable bandgaps and improved photodiode performance.

Keywords:
colloidal quantum dotsgroup III‐V semiconductorsindium antimonidephotodetectorshort wave‐infrared

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Indium antimonide (InSb) colloidal quantum dots (CQDs) are promising for short-wave infrared (SWIR) sensing.
  • Current synthesis methods struggle with precise size control due to precursor reactivity issues.
  • Native surface ligands on InSb CQDs hinder integration into photodiode devices.

Purpose of the Study:

  • To develop a synthesis strategy for InSb CQDs with controlled size distribution and tunable bandgaps.
  • To address challenges in ligand exchange and surface termination for improved device integration.
  • To fabricate and characterize InSb CQD-based photodiode devices for SWIR sensing applications.

Main Methods:

  • Utilized alkyl-phosphine and amine-based organic additives to control In and Sb precursor reactivity during CQD nucleation and growth.
  • Developed a resurfacing process using alkanethiols to displace native ligands and remove oxide species via an acid-base mechanism.
  • Employed a layer-by-layer fabrication process to integrate InSb CQDs into n-i-p photodiode structures.

Main Results:

  • Achieved InSb CQDs with narrowed size distributions and bandgaps tunable across the 1.2-1.5 µm spectral range.
  • Demonstrated peak-to-valley ratios >1.4 in absorption spectra.
  • Fabricated InSb CQD photodiode devices exhibiting a detectivity of 10¹² Jones, 33% EQE at 1380 nm, and T90 stability >19 hours.

Conclusions:

  • The developed synthesis and surface treatment methods enable precise control over InSb CQD properties.
  • The InSb CQD-based photodiodes show high performance for SWIR sensing applications.
  • This work advances the potential of InSb CQDs in infrared sensing technologies.