Related Experiment Video
Updated: May 28, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Correction: Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te)
Le Fang1,2, Chen Chen1,3, Xionggang Lu1,4
1State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, ICQMS and Physics Department, Shanghai University, Shanghai 200444, China. luxg@shu.edu.cn.
Abstract:
Correction for 'Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) using first-principles' by Le Fang et al., Phys. Chem. Chem. Phys., 2023, 25, 20969-20978, https://doi.org/10.1039/D3CP01951A.
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