Correction: Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te)

Le Fang1,2, Chen Chen1,3, Xionggang Lu1,4

  • 1State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, ICQMS and Physics Department, Shanghai University, Shanghai 200444, China. luxg@shu.edu.cn.

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