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Published on: January 22, 2019
Thermally induced halide migration control for high-efficiency and stable pure-red emission from CsPb(Br/I)3
Jiamin Xu1, Dejian Chen2, Kun He3
1CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Key Laboratory of Nanomaterials Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 PR China; University of Chinese Academy of Sciences, Beijing 100049 PR China; Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Research Center of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen 361021 PR China.
Abstract:
Iodide-bromide mixed perovskites have attracted significant attention for achieving pure-red emission. However, halide migration hinders the development of efficient and stable devices. We introduce an in situ crystallization regulation strategy using post-annealing to optimize pure-red CsPb(Br/I)3/PVDF composite films. This process controls thermally induced halide migration, promotes regrowth, enhances crystal quality, and optimizes halide distribution. Consequently, the photoluminescence quantum yield increases from 9.3 % to 33.2 %, one of the highest reported values for pure-red mixed halide perovskite quantum dot films. When integrated with blue Mini-LEDs, the optimized film produces a backlight device exceeding 129 % of the NTSC color gamut standard. These findings advance the practical application of perovskite quantum dots in next-generation displays and pave the way for stable pure-red emitters, crucial for enhancing color gamut coverage and achieving high-resolution displays.

