Improved Selectivity of CeMnOx/Pt@SnO₂ Laminated MOS Sensor for Hydrogen Cyanide Under Temperature Dynamic Modulation

Poor selectivity is one of the main bottlenecks restricting the development of metal oxide semiconductor (MOS) sensors. In this paper, using hydrogen cyanide (HCN) as the target gas, CeMnOx as the catalytic layer material and Pt@SnO₂ as the gas-sensitive layer material, we have proposed a scheme to improve the selectivity of a catalytic layer/gas-sensitive layer-laminated MOS sensor under dynamic temperature modulation. We tested HCN and 12 kinds of battlefield environment simulation gases, and the results showed that the CeMnOx/Pt@SnO₂ sensor, under the condition of temperature dynamic modulation (a constant temperature of 400 °C for the gas-sensitive layer and a variable temperature of room temperature to 400 °C for the catalytic layer; the heating and cooling rates were 200 °C/s, the highest temperature was maintained for 2 s, and the lowest temperature was maintained for 2 s), distinct characteristic peaks appeared on the G-T curves of the resistance response to HCN only. The quantification of the characteristic peaks was performed by peak heights, and the peak height of 5 mg/m³ HCN was obtained up to 0.104, while the peak heights of the other gases at the same concentration were up to 0.034. The peak height of HCN was significantly higher than that of other gases, which verified the high selectivity of the sensor for HCN. Meanwhile, the sensor also showed good sensitivity, response/recovery time, stability and anti-interference for HCN under the above temperature dynamic modulation. This work provides an important reference for the selectivity improvement of MOS sensors for HCN.