Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for...

In conventional phase change memory (PCM) technology, the melting process required to create an amorphous state typically results in extremely high power consumption. Recently, a new type of PCM device based on a melting-free crystal-to-crystal phase transition in MnTe has been developed, offering a potential solution to the problem. However, the electronic and atomic mechanisms underlying this transition remain unclear. In this work, by first-principles calculations, the resistance contrast is attributed to the differences in hole effective mass and vacancy formation energy of the two phases. Moreover, two phase transition pathways of the α-MnTe-to-β-MnTe transition, namely, the 'slide-and-stand-up' transitions, are identified based on coherent atomic movements. The energy barriers for the two pathways are 0.17 eV per formula unit (f.u.) and 0.38 eV/f.u., respectively. Furthermore, the energy barriers can be reduced to 0.10 eV/f.u. and 0.26 eV/f.u. via c-axis tensile strains, which makes the phase transition easier. The current result provides new insights into the non-melting phase transition process in MnTe, facilitating the development of low-power PCM technology.