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Discrete Ferroelectric Polarization Switching in Nanoscale Oxide-Channel Ferroelectric Field-Effect Transistors

Yanjie Shao1, Elham Rafie Borujeny1, Jorge Navarro Fidalgo1

  • 1Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Nano Letters
|February 13, 2025
PubMed

Keywords:
Ferroelectric field-effect transistorferroelectric domainferroelectric fatiguehafnium zirconium oxide (HZO)indium tin oxide (ITO)memory windownonvolatile memory

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