Embedding Te(IV) into a Robust Sn(IV)-Based Metal Halide for Deep-Red Emission.
Zhihao Deng1, Junhao Ma1, Yuqi Peng1
1Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China.
Inorganic Chemistry
|February 14, 2025
Summary
Researchers developed stable, red-emitting tin(IV) metal halides for efficient lighting. Doping with tellurium(IV) ions enhanced photoluminescence and enabled high-performance white light-emitting diodes (WLEDs).
Area of Science:
- Materials Science
- Solid-State Chemistry
- Photonic Materials
Background:
- Organic-inorganic hybrid Sn(IV)-based metal halides offer structural stability.
- Achieving stable, efficient red-emitting Sn(IV) materials with high photoluminescence (PL) efficiency remains a challenge.
- Existing Sn(IV) materials often exhibit poor PL due to inert Sn4+ electrons and indirect band gaps.
Purpose of the Study:
- To develop stable, red-emitting Sn(IV)-based metal halides with enhanced photoluminescence efficiency.
- To overcome the limitations of indirect band gaps and inert electronic configurations in Sn(IV) materials.
- To explore the potential of Te4+ doping for tuning the optoelectronic properties of Sn(IV) metal halides.
Main Methods:
- Synthesized a stable zero-dimensional (0D) organic-inorganic Sn(IV) metal halide, (C8H10O2N)2SnCl6.
- Embedded tellurium(IV) (Te4+) ions into the Sn(IV) lattice to create Te4+-doped (C8H10O2N)2SnCl6.
- Investigated the structural, optical, and photoluminescence properties using experimental and computational methods.
Main Results:
- Te4+ doping transformed the indirect band gap of (C8H10O2N)2SnCl6 to a direct band gap.
- The 5% Te4+-doped material exhibited broadband deep-red emission centered at ~688 nm with high PL efficiency (~53%).
- Fabricated a high-efficiency white light-emitting diode (WLED) with an ultrahigh color rendering index (CRI) of 94.5.
Conclusions:
- Te4+ doping effectively regulates the band structure, enabling efficient radiative recombination in Sn(IV) metal halides.
- This approach provides a pathway for designing highly efficient red-emitting phosphors for advanced lighting applications.
- The developed Te4+-doped Sn(IV) material shows significant potential for solid-state lighting due to its high CRI and efficiency.
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