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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Atomic Manipulation of Metal Oxide Heterointerfaces by Electron Beam Illumination
Quanpan Zhao1, Yanan Zhao2, Mingyue Wang1
1State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350002, China.
Abstract:
Constructing heterointerfaces with space charge areas can effectively drive carrier transport. However, it is difficult to further enhance the interfacial bond strength to improve the built-in potential difference across the interface by directly modulating the interfacial atomic configuration. Herein, we have directly regulated the atomic structures of ZnO/CoO heterointerfaces by means of the phase transition of the rocksalt CoO to spinel Co3O4 under a high-energy electron beam. The results show that irradiation of electron beams can drive the orderly migration and aggregation of Co vacancies as well as the rearrangement of lattice Co atoms from octahedral sites to tetrahedral sites, causing the formation of spinel Co3O4. DFT calculations demonstrate that O atoms adjected to four-coordinated Co atoms are strongly coupled with the Zn atoms, enhancing interfacial polarization to facilitate the charge transfer. This finding provides a novel idea for the design of heterojunctions with high-efficiency charge transport.
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