Doped Mott Phase and Charge Correlations in Monolayer 1T-NbSe_{2}

Area of Science:

• Condensed Matter Physics
• Quantum Materials Science

Background:

• The doped Hubbard model is crucial for understanding exotic quantum many-body states like superconductors.
• Previous experiments in van der Waals materials focused on twisted systems or undoped monolayers.
• Monolayer materials offer higher energy scales for correlated phases, promising high-temperature quantum matter.

Purpose of the Study:

• To realize and investigate a doped Mott phase in a monolayer material.
• To explore correlated phases in electron-doped 1T-transition metal dichalcogenides.
• To understand the mechanisms behind charge correlations in doped 2D materials.

Main Methods:

• Experimental realization of a doped Mott phase in a 1T-NbSe2 monolayer.
• Utilizing electron transfer from a van der Waals substrate via proximity doping.
• Analyzing charge distribution and site occupancy (half-filled and fully filled) on a triangular lattice.

Main Results:

• Demonstrated the realization of a doped Mott phase in 1T-NbSe2.
• Observed a correlated triangular lattice with both half-filled and fully filled sites.
• Showed that charge correlations are driven by competing nonlocal many-body correlations, not solely disorder.

Conclusions:

• 1T-NbSe2 is a viable monolayer platform for studying doped Mott physics.
• The findings advance the understanding of correlated quantum matter in 2D materials.
• Highlights the potential for high-temperature correlated quantum phenomena in doped monolayers.