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Updated: Jul 31, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Remarkably boosting capacitive energy storage of layer-structured nanocomposites via the incorporation of Au quantum
Peng Yin1, Meng Hao2, Xiaohan Bie1
1School of Materials Science and Engineering, Ocean University of China, Qingdao 266100, China.
Abstract:
Polymer dielectrics are widely employed in pulsed energy storage and conversion systems due to their ultrahigh power density, fast discharge speed, and reliability. However, their low discharge energy densities pose a significant limitation for application in miniaturized and integrated devices. Here, a significantly enhanced energy storage property is achieved via incorporating Au quantum dots (QDs) into a sandwich-structured nanocomposite, where the PMMA/P(VDF-HFP) (A/F) blended polymer serves as middle layer and the P(VDF-HFP) acts as outer layer. Benefiting from the micro-capacitor and Coulomb blockade effects induced by the Au QDs, the resulting nanocomposite simultaneously achieves enhanced dielectric constant of 10.34 at 10 kHz and breakdown strength of 577.3 MV m-1. Subsequently, a significantly enhanced discharge energy density of 16.07 J cm-3 is further acquired, which is approximately 177.1 % that of the nanocomposite without Au QDs. This work proposes a novel structure design combining Au quantum dots with a sandwich-structured composites, which also provides a feasible paradigm for optimizing the energy storage performance of polymer dielectrics.

