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Updated: May 27, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Integrated anti-electronics for positron annihilation spectroscopy
1Forschungs-Neutronenquelle Heinz Maier-Leibnitz (FRM II) Technische Universität München, Lichtenbergstraße 1, 85748, Garching, Germany. francesco.guatieri@frm2.tum.de.
Abstract:
Imaging the features of a sample using Positron Annihilation Spectroscopy (PAS) is currently achieved by rastering, i.e. by scanning the sample surface with a sharply focused positron beam. However, a beam of arbitrary shape (sculpted beam) would allow the application of more versatile single-pixel imaging (SPI) techniques. I introduce the design of a microelectronic device employing a 2D array of Zener diodes as an active positron moderator, capable of sculpting positron beams with [Formula: see text] resolution. The re-emitted positrons are accelerated towards the sample through a miniaturized electrostatic lens system and reaching [Formula: see text] resolution. The fast switch-on ([Formula: see text]) and switch-off ([Formula: see text]) time of the device would enable state-of-the-art positron annihilation lifetime spectroscopy (PALS) and PAS imaging with high spatial and temporal resolution.
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