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Updated: May 27, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Copper Vapor Catalyzing Role in the Growth of Graphene
Yuan Chang1, Shiji Li1, Tianyu He1
1State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China.
Abstract:
Cu is the most used substrate to grow monolayer graphene under a temperature near the melting point. In this study, we elaborated a remarkable amount of Cu clusters were continuously evaporated during the graphene growth, resulting in the vapor pressure comparable with the CH4. Importantly, the decomposition barrier of CH4 on Cu clusters is similar to or even lower than that on the Cu surface. CuCH4 serves as the primary active cluster in complex intermediates, exhibiting a growth-promoting effect. Particularly after the first graphene layer coverage, it may emerge as a dominant catalytic factor for multilayer growth by supplying critical growth species. Through controlled seed incorporation, this mechanism is expected to enable large-area controllable growth of bilayer and multilayer graphene structures.

