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Updated: May 27, 2025

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Restriction of silicon aggregation upon enhanced bond cleavage
Shuyue Xue1, Peng Li1, Yingchun Yan1
1Department of Chemical Engineering, Shandong University of Technology, 255000, China.
Abstract:
The inductive effect of atomic nitrogen in the restriction of silicon aggregation is unveiled, upon which silicon nanosheets are uniformly dispersed and tightly embedded in a two-dimensional carbon matrix, illustrating impressive lithium storage stability even after 600 cycles at 5000 mA g-1 and paving a remarkably new way for the development of silicon-based electrodes.
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