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Updated: May 27, 2025
Characterization of Thermal Transport in One-dimensional Solid Materials
Published on: January 26, 2014
Temperature and electron concentration dependences of 1/f noise in Hg1-CdTe - evidence for a mobility fluctuations
Adil Rehman1, Volodymyr Petriakov1, Ivan Yahniuk1,2
1CENTERA Laboratories, Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland. adilrehhman@gmail.com.
Abstract:
Hg1-CdTe is a unique material with its bandgap being tunable by temperature, pressure, and cadmium content over a wide range, from 1.6 eV to an inverted bandgap of -0.3 eV. This makes Hg1-CdTe one of the key materials for infrared and terahertz detectors, whose characteristics largely depend on the material's noise properties. In this work, we investigated the low-frequency 1/f noise in a thick (800 nm) HgCdTe layer and in a field effect transistor (FET) with an 8 nm wide HgTe quantum well. Both structures exhibited a small contribution from contact noise and showed weak noise dependences on temperature. Investigation of the 1/f noise in the HgTe quantum well FET as a function of gate voltage revealed that the noise also depends weakly on electron concentration. These findings indicate that the noise properties of Hg1-CdTe are similar to those of graphene, where mobility fluctuations were found to be the dominant mechanism of the 1/f noise.
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