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Published on: May 13, 2013
Tunneling Barrier-Integrated Gold Nanofilms for Negative Strain Gauging with Near-Zero Energy Consumption
Soosang Chae1, Wonjin Choi2, Su-Hyeong Lee1
1School of Energy Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan, 31253, South Korea.
Abstract:
Wireless strain sensors with minimal power needs are essential for long-term monitoring in energy-limited environments. We present a soft tunneling barrier-integrated gold thin film for negative strain sensing with near-zero energy consumption. The device features a strain-induced transition from an insulating to a metallic state, increasing conductivity by 9 orders of magnitude under a controlled strain. It consists of Au-PDMS-Au nanofilm layers, where the Au structures are near the percolation threshold and the PDMS layer acts as a tunneling barrier. Under strain, thinning due to the Poisson effect lowers the barrier's potential height, enabling electron tunneling and forming an electrical path. With a standby power consumption of ∼10-5 mW over 106 times lower than conventional sensors (∼12.5 mW), this device is ideal for real-time, long-term stationary structural monitoring in multiple locations.

