Enhancing IoT security with threshold switching-based unified security primitives

Guobin Zhang1,2,3, Jianhao Kan3,4, Xuemeng Fan1,2,3

  • 1School of Integrated Circuits, Zhejiang University, Hangzhou 310027, People's Republic of China.

Nanotechnology
|February 24, 2025
PubMed
Summary

Researchers developed integrated secure IoT hardware using threshold switching memristors, combining Physically Unclonable Function (PUF) and true random number generator (TRNG) capabilities. This innovation enhances IoT security with improved energy efficiency and performance.

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
264
Line Protection with Impedance Relays01:27

Line Protection with Impedance Relays

Coordinating time-delay overcurrent relays in complex radial systems and directional overcurrent relays in multi-source transmission loops can be challenging. Impedance relays address these issues by responding to the voltage-to-current ratio, specifically measuring the apparent impedance of a line. These relays become more sensitive during faults as current increases and voltage decreases, thereby reducing the apparent impedance.
Under normal conditions, low load currents keep the measured...
64
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
281
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
324
Masking and Demasking Agents01:19

Masking and Demasking Agents

EDTA titrations may necessitate masking and demasking agents to temporarily protect a particular metal ion in a mixture from the EDTA reaction. These agents facilitate the sequential analysis of the metal ions by forming stable complexes with some—but not all—metal ions during certain steps.
There are many masking agents, such as cyanide, fluoride, triethanolamine, thiourea, and 2,3-bis(sulfanyl)propan-1-ol (formerly 2,3-dimercapto-1-propanol), with the masking agent chosen based on...
2.3K
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
359