Related Experiment Video
Updated: May 26, 2025

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
Published on: November 5, 2014
N-Doped Carbon Layer Encapsulated NiP for Photocatalytic Alcohol Oxidation Coupled Hydrogen Evolution on Ag-In-Zn-S
Tong Ren1, Qitao Chen1, Yanhong Liu1
1School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, P. R. China.
Abstract:
The photocatalytic oxidation of alcohols to value-added chemicals with simultaneous hydrogen (H2) generation is a promising sustainable process that suffers from slow charge transfer and poor integration of both reactions. Here, an NH2-containing Ni metal-organic framework (MOF) is used as a precursor for creating N-doped C layer encapsulated nickel phosphide (NiP@NC), which effectively enhances the charge transfer and reaction coupling when modified on narrow-band-gap Ag-In-Zn-S quantum dots (AIZS QDs). The resulting AIZS/NiP@NC photocatalysts demonstrate high efficiency for benzyl alcohol (BA) oxidation coupled H2 evolution, achieving H2/benzaldehyde production rates of 9.66/5.67 mmol g-1 h-1, which are 3.30 and 47.25 times higher than those of pure AIZS QDs, respectively. Additionally, the selectivity of benzaldehyde is enhanced to 77.96%. AIZS/NiP@NC also shows improved performance for other organics, including 4-methoxybenzyl alcohol and biomass-derived furfuryl alcohol. Photoelectrochemical and transient photovoltage spectroscopy tests confirm the increased effective surface charges and charge transfer efficiency, while electron paramagnetic resonance spectroscopy reveals a carbon-centered radical pathway for selective benzaldehyde formation. DFT calculations suggest that the N-doped carbon enhances the proton adsorption on Ni sites and BA adsorption on the NiP@NC surface. This work highlights the potential of multifunction integration in developing carbon-based cocatalysts for photocatalytic alcohol oxidation coupled H2 evolution.
Related Concept Videos
P-N junction
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

