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Updated: May 26, 2025

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

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Optimizing Sn Doping in Zn₄Sb₃ Thin Films: Insights into Processing and Electrical Performance.

Cheng-Lung Chen¹, Bo-Chen Tang², Sheng-Chi Chen^2,3

¹Department of Physics, National Chung Hsing University, Taichung City, 40227, Taiwan.

|February 25, 2025

Summary

Tin doping stabilizes the promising thermoelectric material beta-Zn4Sb3, enhancing its performance. This method preserves the desired phase, leading to significant improvements in thermoelectric power factor for energy harvesting applications.

Keywords:

Doping Energy efficiency Ion beam-assisted deposition Renewable energy Thermoelectric Zn4Sb3

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Published on: October 3, 2015

Area of Science:

Materials Science
Solid State Physics
Energy Harvesting

Background:

Beta-Zn4Sb3 is an environmentally friendly thermoelectric material suitable for mid-temperature applications.
Phase instability during fabrication is a major challenge, degrading thermoelectric performance.
Developing stable thermoelectric materials is crucial for renewable energy technologies.

Purpose of the Study:

To optimize beta-Zn4Sb3 thin films for enhanced thermoelectric performance.
To investigate the effect of controlled tin (Sn) doping on phase stability and thermoelectric properties.
To establish a pathway for fabricating high-quality thermoelectric thin films.

Main Methods:

Ion beam-assisted deposition was used to create Sn-doped beta-Zn4Sb3 thin films.
Precise control of Sn concentration (0.97%) was employed to stabilize the beta-phase.
Thermoelectric properties, carrier mobility, and structural stability were comprehensively analyzed.

Main Results:

Controlled Sn doping at 0.97% successfully preserved the pure beta-Zn4Sb3 phase.
A maximum power factor of 1.4 mW m⁻¹ K⁻² was achieved at 573 K, a 60% improvement over undoped films.
Dilute Sn doping enhanced carrier mobility and structural stability, preventing phase transitions to ZnSb.

Conclusions:

Precise doping and processing control are essential for stabilizing the beta-phase of Zn4Sb3.
Sn doping offers a viable strategy for fabricating high-performance thermoelectric thin films.
This research contributes to the development of scalable and efficient energy harvesting technologies.