Related Experiment Video
Updated: May 26, 2025

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence
Published on: March 6, 2020
Parallel tempered Bayesian inference for characterizing non-ideal semiconductors: Carrier trapping in cadmium
Calvin Fai1, Anthony J C Ladd1, Charles J Hages1
1Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
Abstract:
We describe an improved Bayesian inference methodology to characterize photovoltaic materials by matching charge carrier simulations to spectroscopy data. A "parallel tempering" scheme is introduced, which efficiently and reliably locates the global maximum in the complex multimodal distributions that are characteristic of cadmium telluride (CdTe) films. Our results show that the standard carrier transport model cannot explain the observed decay of time-resolved photoluminescence (TRPL) data from CdTe films and that there is carrier trapping within low-lying defect states. This inference has been confirmed by temperature-dependent TRPL and time-resolved emission spectroscopy (TRES). Our work shows that Bayesian inference can discriminate between plausible physics models, as well as determine parameter values for a given model. Finally, we have combined TRPL with time-resolved terahertz spectroscopy (TRTS) to describe the dynamics on nanosecond to microsecond time scales. These results show that sample degradation can be detected by its effect on surface recombination.
More Related Videos
07:38Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Related Concept Videos
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Types of Semiconductors
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...