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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
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Analyzing Structural Optical and Phonon Characteristics of Plasma-Assisted Molecular-Beam Epitaxy-Grown InN/Al2O3
Devki N Talwar1,2, Li Chyong Chen3, Kuei Hsien Chen4
1Department of Physics, University of North Florida, 1 UNF Drive, Jacksonville, FL 32224, USA.
Nanomaterials (Basel, Switzerland)
|February 25, 2025
Summary
Indium nitride (InN) epifilms grown on sapphire substrates exhibit tunable bandgaps and improved crystalline quality with optimized growth conditions. These findings are crucial for developing advanced electronic and optoelectronic devices.
Area of Science:
- Materials Science
- Solid State Physics
- Semiconductor Research
Background:
- Indium nitride (InN) is a narrow bandgap semiconductor with unique properties, making it attractive for optoelectronic and high-power applications.
- The growth of high-quality InN epifilms is sensitive to various parameters, including temperature, plasma power, and nitrogen pressure.
- Understanding the influence of growth conditions on InN properties is essential for device fabrication.
Purpose of the Study:
- To investigate the impact of growth parameters on the structural, optical, and electronic properties of InN/Sapphire epifilms.
- To correlate experimental findings with theoretical calculations for a comprehensive understanding of InN material characteristics.
- To explore the potential of InN for applications such as infrared photodetectors and electronic devices.
Main Methods:
- Plasma-assisted molecular-beam epitaxy (PAMBE) was used to grow InN/Sapphire samples of varying film thicknesses.
- Hall effect measurements were employed to determine electron-charge carrier concentration (η).
- Photoluminescence, high-resolution X-ray diffraction (HRXRD), infrared reflectivity spectroscopy, and Raman scattering spectroscopy were utilized for material characterization.
Main Results:
- High electron-charge carrier concentration (η) was observed in the InN samples.
- Photoluminescence measurements confirmed a bandgap variation between ~0.60–0.80 eV.
- HRXRD indicated improved crystalline quality with increased growth temperature, and Raman spectroscopy identified accurate phonon values and a longitudinal optical phonon plasmon-coupled mode.
Conclusions:
- Optimized growth conditions, particularly growth temperature, significantly enhance the crystalline quality and structural order of InN epifilms.
- The study validates the tunability of the InN bandgap and confirms the role of ionized nitrogen species in film growth.
- The findings provide valuable insights for the development of InN-based infrared optoelectronics and high-power devices.
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