A Comparison Between Ripening Under a Constant Volume and Ripening Under a Constant Surface Area.

Area of Science:

• Materials Science
• Solid-State Physics
• Electrical Engineering

Background:

• The classic Lifshitz-Slyozov-Wagner (LSW) theory assumes constant volume during ripening.
• Microstructure changes in intermetallic compounds are critical in 3D integrated circuit (IC) technology.
• Consumer electronics rely on advanced 3D IC packaging for performance.

Purpose of the Study:

• To present a novel ripening model based on constant surface area for 3D IC applications.
• To investigate the influence of electrical charges on ripening kinetics in micro-bumps.
• To analyze kinetic modes of failure and develop mean-time-to-failure (MTTF) equations.

Main Methods:

• Developed a theoretical model for ripening under constant surface area conditions.
• Incorporated the effects of electrical charges, Joule heating, and electromigration.
• Derived kinetic failure modes and entropy production-based MTTF equations.

Main Results:

• A constant surface area model necessitates volume growth, diverging from classical LSW theory.
• Combined heat and atomic flux due to electrical charges significantly impact ripening kinetics.
• Identified distinct kinetic modes of failure and provided quantitative MTTF predictions.

Conclusions:

• The proposed model offers a more realistic approach to ripening in 3D ICs.
• Understanding these kinetics is crucial for the reliability and longevity of micro-electronic devices.
• The study provides a framework for predicting failure in advanced electronic packaging.