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A Comparison Between Ripening Under a Constant Volume and Ripening Under a Constant Surface Area
King-Ning Tu1,2, Andriy M Gusak3,4, Qinglei Sun1,5
1Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong.
Abstract:
The classic Lifshitz-Slyozov-Wagner (LSW) theory of ripening assumes a constant volume. In comparison, we present here a model of ripening assuming a constant surface area, which has occurred in the microstructure changes in intermetallic compounds in micro-bump for 3D integrated-circuit (IC) technology in consumer electronic products. However, to keep a constant surface area requires the growth of the volume. Furthermore, in 3D IC technology, the kinetics is affected by electrical charges flowing in and out of the system. Due to Joule heating and electromigration, heat flux and atomic flux can occur together. The kinetic modes of failure changes are given here, as well as the mean-time-to-failure equations based on entropy production.
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