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Updated: May 26, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Electronic and Magnetic Properties of Manganese Bromide Monolayers
Guilherme Carlos Carvalho de Jesus1, Railson da Conceição Vasconcelos1, Lucas Bezerra do Vale1
1Institute of Physics, University of Brasília, Campus Darcy Ribeiro, Brasília, DF 70910-900, Brazil.
Abstract:
This study investigates the electronic and magnetic properties of monolayer and bulk manganese bromide (MnBr2) through ab initio simulations based on density functional. We computed the lattice parameters, band structures, and projected density of states, shedding light on the intrinsic magnetic behavior of MnBr2. Our analysis of atomic magnetic moments indicates that the incomplete 3d orbital of the manganese atom, containing five electrons, drives the material's intrinsic magnetism. Additionally, our simulations reveal that the antiferromagnetic configuration is energetically more stable than the ferromagnetic configuration. Notable, We find that the MnBr2 system achieves its lowest energy state when the manganese magnetic moments are aligned perpendicular to the monolayer supercell plane. These findings highlight manganese bromide's potential as a candidate for future applications in nanoelectronics and spintronics.
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