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Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates.

Priyanka Petluru1, Shang Liu2, Luke McClintock3

  • 1Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.

ACS Applied Materials & Interfaces
|February 25, 2025
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Summary
This summary is machine-generated.

This study presents a polycrystalline Germanium-Tin (GeSn) phototransistor on a fused silica substrate. The device demonstrates a gate-tunable photoresponse in the short-wave infrared, crucial for advanced sensing applications.

Keywords:
GeSnoptoelectronic devicephototransistorpolycrystallineshort-wave infrared

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Optoelectronics

Background:

  • Germanium-Tin (GeSn) is a group-IV alloy compatible with Silicon CMOS technology.
  • GeSn with high Sn composition exhibits a direct bandgap, enabling optoelectronic applications.
  • Polycrystalline GeSn offers lower cost and substrate versatility compared to epitaxial GeSn.

Purpose of the Study:

  • To develop and characterize a polycrystalline thin-film GeSn phototransistor on a non-crystalline substrate.
  • To evaluate the phototransistor's performance in the short-wave infrared (SWIR) spectrum.
  • To demonstrate the potential for integrating GeSn photodetectors with diverse substrates for multimodal sensors.

Main Methods:

  • Fabrication of a polycrystalline GeSn thin-film phototransistor with ~10% Sn composition on a fused silica substrate.
  • Characterization of the device's photoresponse and gate-tunable characteristics.
  • Analysis of responsivity and specific detectivity.

Main Results:

  • The GeSn phototransistor exhibited a photoresponse in the SWIR range.
  • A gate-tunable response was observed, with responsivities up to 1.7 mA/W using a 30 nm-thick GeSn layer.
  • Specific detectivity was within an order of magnitude of previously reported GeSn photodetectors, despite thinner absorbers and longer electrode spacing.

Conclusions:

  • Polycrystalline GeSn phototransistors on fused silica demonstrate viability for SWIR sensing.
  • Gate tunability enhances signal-to-noise ratio and offers integration flexibility.
  • This work establishes a versatile pathway for GeSn-based photodetectors on non-crystalline substrates for next-generation sensors.