50 eV O+ ion induced deposition of tin dioxide using tetramethyltin
Satoru Yoshimura1, Takae Takeuchi1, Masato Kiuchi1,2
1Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan.
Abstract:
The aim of the present study was to deposit tin oxide films on Si wafers or quartz crystal microbalance plates acting as substrates, using low-energy ion beams. The substrates were held at ambient temperature and two different methods were employed. In one case, the substrates were exposed to a 100 eV beam of Sn+ ions together with a flow of gaseous oxygen, and these conditions were found to generate films. Analyses by X-ray photoelectron spectroscopy (XPS) confirmed that these films were made of metallic tin. In other trials, the substrates were exposed to tetramethyltin in conjunction with a 50 eV O+ ion beam. This procedure deposited films with a thickness of 30 nm and assessments by XPS and X-ray diffraction established that these films were made of tin dioxide.
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