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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Bingchao Wu1,2,3, Shujuan Zhu1,2,3, Longfeng Lv1,3
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
This study introduces a novel Ti3C2T/GO/GaAs photodetector using a graphene oxide layer. This MXene-based device achieves high detectivity and fast response for sensitive light detection.
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