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Unexpected Large Electrostatic Gating by Pyroelectric Charge Accumulation.

Yicheng Mou1, Qi Liu1, Jiaqi Liu1

  • 1State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.

Nano Letters
|February 27, 2025
PubMed
Summary
This summary is machine-generated.

This study demonstrates a novel method for achieving long-term electrostatic gating in graphene devices using the pyroelectric effect of lithium niobate. This voltage-free approach offers a new way to control doping concentrations in electronic components.

Keywords:
electrostatic gatingferroelectricitygraphenepyroelectric effectsurface acoustic waves

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Pyroelectricity involves charge accumulation from temperature-induced polarization changes in ferroelectric materials.
  • This effect is typically unstable and overlooked in electronic applications like ferroelectric field-effect transistors.
  • Graphene's unique electronic properties make it suitable for novel device applications.

Purpose of the Study:

  • To investigate the potential of pyroelectricity for achieving stable electrostatic gating in graphene devices.
  • To explore the use of a ferroelectric substrate (LiNbO3) and a van der Waals interface (hBN) for enhanced pyroelectric effects.
  • To demonstrate a novel, voltage-free gating mechanism with long retention.

Main Methods:

  • Utilized a LiNbO3 substrate with pyroelectric properties and a hexagonal boron nitride (hBN) interface.
  • Fabricated graphene devices on the LiNbO3/hBN heterostructure.
  • Employed transport measurements and noncontact techniques to analyze doping levels and charge accumulation.

Main Results:

  • Achieved substantial and long-term electrostatic gating in graphene via the pyroelectric effect of LiNbO3.
  • Observed high doping concentrations in graphene, up to 10^13 cm^-2, upon cooling.
  • Demonstrated that pyroelectric charge accumulation, enhanced by electric fields, is responsible for the high doping levels.

Conclusions:

  • The pyroelectric properties of LiNbO3 can induce significant and persistent doping in graphene through a van der Waals interface.
  • This work presents a novel mechanism for voltage-free electrostatic gating with long retention, overcoming previous limitations of the pyroelectric effect.
  • The findings open new avenues for developing advanced electronic devices utilizing pyroelectric materials for tunable doping and control.