Related Experiment Video
Updated: May 25, 2025

14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
14.4K
SWAP Gate for Spin Qubits Based on Silicon Devices Integrated with a Micromagnet.
Ming Ni1,2, Rong-Long Ma1,2, Zhen-Zhen Kong3
1CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
Nano Letters
|February 28, 2025
Summary
Researchers demonstrated a high-fidelity SWAP gate in silicon spin qubits using a micromagnet. This breakthrough enables adjustable exchange coupling, crucial for quantum communication and simulation applications.
Area of Science:
- Quantum Computing
- Quantum Information Science
- Solid-State Physics
Background:
- SWAP-family gates are essential for quantum information processing, enabling spin state transfer and entanglement.
- Implementing high-fidelity SWAP gates is challenging due to the need for precise control over exchange coupling and energy differences.
Purpose of the Study:
- To demonstrate a high-fidelity SWAP gate in a double quantum dot system.
- To overcome obstacles in achieving adjustable exchange coupling for improved gate fidelity.
Main Methods:
- Utilized a double quantum dot in isotopically enriched silicon with a micromagnet.
- Achieved a two-orders-of-magnitude adjustable ratio between exchange coupling (J) and Zeeman energy difference (ΔE).
- Calibrated single-qubit local phases and analyzed dominant error sources.
Main Results:
- Successfully demonstrated a SWAP gate in the silicon spin qubit system.
- Achieved a significant adjustable ratio between exchange coupling and Zeeman energy difference, enhancing gate fidelity.
- Evaluated the logical-basis fidelity of the SWAP gate.
Conclusions:
- The demonstrated SWAP gate is a significant step towards high-fidelity quantum operations.
- This work paves the way for advanced quantum communication on chip and quantum simulation.
- The developed techniques are crucial for scalable quantum computing architectures.
Related Concept Videos
Atomic Nuclei: Nuclear Spin State Overview
843
NMR-active nuclei have energy levels called 'spin states' that are associated with the orientations of their nuclear magnetic moments. In the absence of a magnetic field, the nuclear magnetic moments are randomly oriented, and the spin states are degenerate. When an external magnetic field is applied, the spin states have only 2 + 1 orientations available to them. A proton with = ½ has two available orientations. Similarly, for a quadrupolar nucleus with a nuclear spin value of...
843
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
939
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
939
Biasing of Metal-Semiconductor Junctions
188
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
188
MOSFET: Enhancement Mode
259
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
259

