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Updated: May 25, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
SWAP Gate for Spin Qubits Based on Silicon Devices Integrated with a Micromagnet
Ming Ni1,2, Rong-Long Ma1,2, Zhen-Zhen Kong3
1CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
Abstract:
In our toolbox of quantum gates for spin qubits, the SWAP-family gates based on Heisenberg exchange coupling are quite versatile: the SWAP gate can help solve the connectivity problem by realizing both short- and long-range spin state transfer, while the gate is a basic two-qubit entangling gate. Here we demonstrate a SWAP gate in a double quantum dot in isotopically enriched silicon in the presence of a micromagnet. We achieve a two-orders-of-magnitude adjustable ratio between the exchange coupling J and the Zeeman energy difference ΔE, overcoming a major obstacle for a high-fidelity SWAP gate. We also calibrate the single-qubit local phases, evaluate the logical-basis fidelity of the SWAP gate, and further analyze the dominant error sources. These results pave the way for high-fidelity SWAP gates and processes based on them, such as quantum communication on chip and quantum simulation.
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