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Carrier Transport

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:

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Updated: May 24, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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In-Depth Analysis of Electron and Hole Transport Layers for Enhancing Ca₃PI₃ Solar Cell Efficiency through Advanced

Md Selim Reza¹, Avijit Ghosh¹, Nidhal Drissi²

¹Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur 5400, Bangladesh.

Langmuir : the ACS Journal of Surfaces and Colloids

|February 28, 2025

Summary

This study explores lead-free calcium-phosphorus iodide perovskite solar cells, optimizing electron and hole transport layers. Device-I, featuring TiO2 and MoO3, achieved a 29.02% power conversion efficiency, demonstrating high potential for photovoltaics.

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Area of Science:

Materials Science
Renewable Energy
Semiconductor Physics

Background:

Lead-free perovskite solar cells offer a sustainable alternative to traditional photovoltaic technologies.
Calcium-phosphorus iodide (Ca3PI3) is an emerging material with promising optoelectronic properties for solar energy conversion.
Optimization of electron and hole transport layers (ETLs and HTLs) is crucial for maximizing solar cell performance.

Purpose of the Study:

To investigate the performance of lead-free Ca3PI3 perovskite solar cells using various ETLs and HTLs.
To identify the optimal combination of ETL and HTL for enhanced power conversion efficiency (PCE).
To simulate and analyze device performance using the SCAPS-1D tool, optimizing key parameters.

Main Methods:

Simulation of two device structures (Device-I and Device-II) using SCAPS-1D.
Evaluation of different ETLs (TiO2, SnS2) and HTLs (CuO, MoO3, P3HT, Sb2S3, CuSbS2, GeSe).
Optimization of critical device parameters including layer thickness, defect density, and carrier concentrations.

Main Results:

Device-I (Al/FTO/TiO2/Ca3PI3/MoO3/Ni) achieved a record PCE of 29.02% with a V_OC of 1.288 V, J_SC of 25.235 mA/cm², and FF of 89.26%.
Device-II (Al/FTO/SnS2/Ca3PI3/MoO3/Ni) demonstrated a PCE of 26.47% with a V_OC of 1.2486 V, J_SC of 25.233 mA/cm², and FF of 84.01%.
MoO3 was identified as the ideal HTL, and TiO2 as a highly effective ETL for Ca3PI3 solar cells.

Conclusions:

The optimized Ca3PI3 perovskite solar cell (Device-I) exhibits exceptional performance, highlighting its potential for next-generation photovoltaics.
The study provides valuable insights into material selection and device engineering for high-efficiency lead-free perovskite solar cells.
Further research can build upon these findings to advance the commercial viability of Ca3PI3-based solar technologies.