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Modeling methodology for thermo-structural analysis of V-NAND flash memory structure.

Yongha Kim1, Seungjun Ryu2, Sungryung Lee2

  • 1School of Mechanical Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea. yongha_kim@cnu.ac.kr.

Scientific Reports
|March 2, 2025
PubMed
Summary

A new modeling method simplifies thermo-electric-structural analysis for V-NAND flash memory, considering Joule heating effects. This approach enhances V-NAND flash memory integration and creates a valuable database for future semiconductor designs.

Keywords:
Homogeneous methodRitz methodSemiconductor applicationThermo-electric-structural analysisV-NAND flash memory structure

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Computational Engineering

Background:

  • V-NAND flash memory structures are susceptible to thermal stress from Joule heating.
  • Accurate thermo-electric-structural analysis is crucial for optimizing V-NAND device performance and reliability.
  • Existing modeling methods may lack the efficiency and simplicity required for complex semiconductor analysis.

Purpose of the Study:

  • To propose a novel, computationally efficient modeling methodology for thermo-electric-structural analysis of V-NAND flash memory.
  • To investigate the thermal mechanical characteristics of V-NAND structures under Joule heating.
  • To optimize V-NAND flash memory integration using the developed modeling approach.

Main Methods:

  • Development of a continuous, homogeneous modeling methodology based on energy balance and Watt's law.
  • Formulation of governing equations for thermo-electric-structural behavior using a displacement function.
  • Verification through 3D finite element analysis and parametric studies.
  • Optimization utilizing response surface methodology with a failure index as the response function.

Main Results:

  • The proposed modeling methodology accurately predicts thermo-electric-structural behavior in V-NAND structures.
  • Parametric analysis revealed key thermal mechanical characteristics influencing V-NAND performance.
  • Optimization significantly improved V-NAND flash memory integration potential.
  • A comprehensive database of V-NAND thermal mechanical characteristics was generated.

Conclusions:

  • The developed modeling methodology offers a simple and computationally efficient tool for V-NAND analysis.
  • The findings contribute to the design and optimization of next-generation semiconductor devices.
  • The generated database supports further advancements in V-NAND flash memory technology.