2D MoS₂ for Next-Generation Electronics and Optoelectronics: From Material Properties to Manufacturing Challenges and...

The emergence of innovative 2D materials represents a significant evolution in materials science, heralding new opportunities for the advancement of information technologies in the era succeeding Moore's law. These materials span various categories, including semi-metallic, semiconductor, and insulating types, showcasing their versatility. The exceptional characteristics of these atomically thin and planar materials herald a new era in the miniaturization of devices. Integrating 2D materials into field-effect transistors (FETs) with sub-nanometer scale gate architectures demonstrates typical switching behaviors, confirming their applicability in integrated circuits. Concurrently, the development of wafer-level and silicon-compatible manufacturing techniques specifically designed for 2D materials and their devices underscores their significant promise in nanoelectronics and nanophotonics. Particularly, Molybdenum disulfide (MoS₂) stands out for its direct bandgaps and bound excitons, offering profound implications for advancing nanoelectronics and nanophotonics. This review investigates the intrinsic structure and properties of MoS₂, evaluates various methods for wafer-scale synthesis, and examines critical applications in nanoelectronics, such as 2D FETs, photodetectors, and memristors, alongside nanophotonics applications like nano-scale laser sources, exciton-plasmon interaction for advanced sensing applications, and photoluminescence manipulation. Additionally, this review addresses current challenges and future prospects for developing MoS₂-based technologies in next-generation nanoelectronic and nanophotonic devices.