Polyoxometalate-Doped Hole Transport Layer to Boost Performance of MaPbI₃-Based Inverted-Type Perovskite Solar Cells

Area of Science:

• Materials Science
• Renewable Energy Technologies
• Nanotechnology

Background:

• Perovskite solar cells (PSCs) are a key focus in photovoltaic (PV) research due to their potential for high efficiency.
• Challenges in PSCs include efficiency limitations, long-term stability, and repeatability issues.
• The hole transport layer (HTL) is critical for efficient charge extraction in PSCs.

Purpose of the Study:

• To investigate the impact of Ge-doped polyoxometalate (GePOM) as a dopant in the HTL of PSCs.
• To address challenges related to efficiency, stability, and repeatability in PSCs.
• To evaluate the effects of GePOM doping on conductivity and photovoltaic parameters.

Main Methods:

• Incorporation of Ge-doped polyoxometalate (GePOM) into the PEDOT/PSS hole transport layer (HTL) of PSCs.
• Systematic doping with varying concentrations of GePOM, up to a maximum of 2%.
• Characterization of photovoltaic parameters, including efficiency, fill factor, short-circuit current density (Jsc), and open-circuit voltage (Voc).

Main Results:

• PSCs with 2% GePOM doping in the HTL showed an average efficiency increase of 27% compared to reference devices.
• The efficiency of PSCs increased from 11.18% (reference) to 14.22% with 2% GePOM doping.
• Enhanced stability and repeatability were observed in doped PSCs.
• The champion device achieved a fill factor of 0.74, Jsc of 19.78 mA/cm², and Voc of 0.98 V.

Conclusions:

• Ge-doped polyoxometalate is an effective dopant for improving the performance of perovskite solar cells.
• Doping the HTL with GePOM significantly enhances PSC efficiency, stability, and repeatability.
• GePOM doping offers a promising strategy for advancing PSC technology.