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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

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Updated: Jun 27, 2026

Silicon Microchips for Manipulating Cell-cell Interaction
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Published on: August 30, 2007

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A Programmable CMOS DEP Chip for Cell Manipulation.

Wen-Yue Lin, Lin-Hung Lai, Yi-Wei Lin

    IEEE Transactions on Biomedical Circuits and Systems
    |March 3, 2025
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces a programmable dielectrophoresis (DEP) chip for precise, real-time control of cell movement and patterning. The reconfigurable CMOS chip enables advanced cell manipulation for biological applications.

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    Area of Science:

    • Biotechnology
    • Microfluidics
    • Electrical Engineering

    Background:

    • Precise control of cell manipulation is crucial for various biological applications, including drug screening and tissue engineering.
    • Existing methods for cell manipulation often lack real-time control and reconfigurability.
    • Dielectrophoresis (DEP) offers a label-free method for manipulating biological particles, but its spatial control can be challenging.

    Purpose of the Study:

    • To develop a programmable CMOS chip for real-time, spatially controlled dielectrophoresis (DEP) force.
    • To enable advanced cell manipulation techniques, including single-cell manipulation and multi-cell patterning.
    • To demonstrate the chip's utility in biological applications such as cell preparation and drug screening.

    Main Methods:

    • A 128x128 array of individually controllable microelectrodes was fabricated using a standard 0.18 μm CMOS process.
    • Time-sharing patterns were implemented to enhance manipulation precision and create distinct phase boundaries.
    • The chip was operated at 1.8 V, achieving particle manipulation speeds up to 27 μm/s.

    Main Results:

    • Demonstrated real-time control over the spatial distribution of DEP force for controlled cell movement.
    • Achieved precise single-cell manipulation, multi-cell patterning, and concentration control on the same chip.
    • Confirmed cell viability post-manipulation and demonstrated stem cell aggregation control.

    Conclusions:

    • The programmable CMOS DEP chip offers a versatile platform for advanced cell manipulation.
    • The chip's reconfigurability and precision address key technical challenges in cell preparation and biological assays.
    • This technology holds significant promise for applications in drug screening, tissue engineering, and fundamental biological research.