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Pre-Charged Collapse-Mode Capacitive Micromachined Ultrasonic Transducer (CMUT) Receivers for Efficient Power
Capacitive micromachined ultrasonic transducers (CMUTs) with embedded charge storage layers eliminate the need for external bias voltage. Silicon nitride (Si3N4) and thicker dielectric layers enhance performance for wireless power transfer applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Biomedical Engineering
Background:
- Capacitive micromachined ultrasonic transducers (CMUTs) are advantageous for implantable devices over traditional lead zirconate titanate (PZT) transducers.
- Eliminating the external bias voltage requirement for CMUTs is crucial for device miniaturization and integration.
Purpose of the Study:
- To evaluate plasma-enhanced chemical vapor deposition (PECVD) Si3N4 and atomic layer deposition (ALD) Al2O3 as charge storage layer materials.
- To investigate the impact of dielectric layer thickness on CMUT performance as receivers in wireless power transfer (WPT).
Main Methods:
- Capacitance-voltage (CV) measurements to assess charge storage capacity.
- Dynamic accelerated lifetime transmit (TX)-mode tests for charge trapping and retention analysis.
- Electrical impedance measurements and equivalent circuit modeling for power conversion efficiency prediction.
Main Results:
- Si3N4 demonstrated superior charge storage capacity compared to Al2O3.
- A thicker dielectric layer (Bdiel) enhanced charge trapping and retention.
- Simulations and experiments showed power conversion efficiencies exceeding 80% with optimal load matching at 1- and 2.4-MHz.
Conclusions:
- CMUTs with embedded charge storage layers are viable for wireless power transfer applications.
- Material selection (Si3N4) and dielectric thickness are critical for optimizing CMUT performance.
- Optimal CMUT variant selection should consider charge retention time alongside power conversion efficiency.
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