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Published on: July 2, 2018
Topologically protected magnetic structures in perforated multilayer films
Magadeev Eugene Borisovich1, Ratmir Rimovich Nugumanov1, Sharafullin Ildus Fanisovich1
1Laboratory Design of new materials, Ufa University of Science and Technology, 32, Zaki Validy str., Ufa 450076, Russia.
This study explores thin ferromagnetic films, revealing how specific structures create new magnetic properties. These films can function as novel memory cells, encoding data using magnetic domain walls and perforations.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Thin ferromagnetic films are crucial for magnetic storage technologies.
- Understanding magnetic anisotropy and domain wall behavior is key to developing advanced memory devices.
- Layered structures of easy-axis and easy-plane materials offer unique magnetic properties.
Purpose of the Study:
- To theoretically investigate the magnetic properties of layered ferromagnetic films.
- To explore the formation of effective anisotropy and new easy magnetization directions.
- To analyze domain wall structures and their potential for data storage applications.
Main Methods:
- Theoretical modeling of thin ferromagnetic films with layered structures.
- Analysis of effective anisotropy arising from material layering.
- Study of domain wall (DW) structures during magnetization transitions.
- Investigation of topologically protected inhomogeneities in perforated films.
Main Results:
- Effective anisotropy can emerge in layered films, creating two independent easy magnetization orbits.
- Domain wall structures were analyzed for transitions between these orbits.
- Perforations in films can lead to topologically protected inhomogeneities with six distinct states.
- Paired perforations act as memory cells for base-6 data encoding.
Conclusions:
- Layered ferromagnetic films exhibit tunable magnetic properties suitable for novel applications.
- The proposed system offers a new paradigm for high-density data storage using magnetic domain walls.
- Paired perforations in films can function as independent memory cells, enabling base-6 data recording.
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