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Published on: July 17, 2015
Stacking-Dependent Correlated Gap and Kondo Peak in the Heterophase Bilayer with Picometer-Level Interlayer Shift
Liwei Liu1, Yaoyao Chen1, Zexuan Liu2
1School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China.
Abstract:
Two-dimensional heterojunctions provide a versatile platform for exploring various quantum properties. Here, we create bilayer 1T/2H-NbSe2 heterophase junctions and realize two types of stacking configurations with picometer-level lattice shifts. By high-resolution scanning tunneling microscopy/spectroscopy, we found that the electronic states are highly dependent on the stacking configurations of the 1T layer on the 2H one. Unexpectedly, a tiny shift between the two configurations (about 110 pm in the lateral direction and 30 pm in the vertical one) leads to a change from a correlated gap lattice into a Kondo peak lattice. Moreover, both of them show a spin-related pseudogap width of 2-3 meV close to the Fermi level, which splits under the external magnetic field. Our study demonstrates the important role of delicate stacking configurations on the many-body physics and spin-related phenomena in the heterophase junctions.
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