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Published on: August 30, 2012
Investigation of Modal Characteristics of Silicon Nitride Ridge Waveguides for Enhanced Refractive Index Sensing
Muhammad A Butt1, Lukasz Kozlowski1, Mateusz Słowikowski2
1Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Abstract:
This paper investigates the wavelength-dependent sensitivity of a ridge waveguide based on a silicon nitride (Si3N4) platform, combining numerical analysis and experimental validation. In the first part, the modal characteristics of a Si3N4 ridge waveguide are analyzed in detail, focusing on the effective refractive index (neff), evanescent field ratio (EFR), and propagation losses (αprop). These parameters are critical for understanding the interplay of guided light with the surrounding medium and optimizing waveguide design for sensing applications. In the second part, the wavelength-dependent sensitivity of a racetrack ring resonator (RTRR) based on the Si3N4 waveguide is experimentally demonstrated. The results demonstrate a clear increase in the sensitivity of the RTRR, rising from 116.3 nm/RIU to 143.3 nm/RIU as the wavelength shifts from 1520 nm to 1600 nm. This trend provides valuable insights into the device's enhanced performance at longer wavelengths, underscoring its potential for applications requiring high sensitivity in this spectral range.
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