An All-in-One Testing Chip for the Simultaneous Measurement of Multiple Thermoelectric Parameters in Doped...

Polysilicon is widely used as a thermoelectric material due to its CMOS compatibility and tunability through doping. The accurate measurement of the thermoelectric parameters-such as the Seebeck coefficient, thermal conductivity, and electrical resistivity-of polysilicon with various doping conditions is essential for designing and fabricating high-performance thermopile sensors. This work presents an all-in-one testing chip that incorporates double-layer thermoelectric structures on a suspended membrane-based supporting layer, with polysilicon constituting at least one of these thermoelectric layers. By employing a differential calculation approach in conjunction with thermal imaging methods, we could simultaneously measure various thermoelectric parameters-including resistivity, the Seebeck coefficient, and thermal conductivity-of polysilicon under different doping conditions. Furthermore, the method proposed in this study provides a means for accurately obtaining thermoelectric parameters for other materials, thereby facilitating the design and optimization of thermoelectric devices.