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A 3.2-3.6 GHz GaN Doherty Power Amplifier Module Based on a Compact Low-Loss Combiner
Xiyu Wang1, Dehan Wang1,2, Wenming Li2
1State Key Laboratory of Mobile Network and Mobile Multimedia Technology, Shenzhen 518055, China.
Micromachines
|March 6, 2025
Summary
This study introduces a compact 3.2-3.6 GHz two-stage Doherty power amplifier (PA) module for 5G base stations, achieving high gain and efficiency using GaN transistors.
Area of Science:
- Electrical Engineering
- Microwave Engineering
- Telecommunications
Background:
- Fifth-generation (5G) massive multiple-input multiple-output (MIMO) base stations require efficient and compact power amplifiers.
- Existing power amplifier designs may face challenges in meeting the stringent performance demands of 5G systems.
Purpose of the Study:
- To propose and implement a compact, high-performance two-stage Doherty power amplifier (PA) module for 5G massive MIMO base stations.
- To detail the design of a low-loss combiner optimized for Doherty PA modules.
Main Methods:
- Design and implementation of a compact, low-loss combiner.
- Integration of gallium nitride (GaN) transistors and surface-mounted devices (SMDs) into an 8x8 mm^2 Doherty PA module.
- Performance characterization including bandwidth, gain, output power, and efficiency.
Main Results:
- Achieved a 3 dB small-signal bandwidth of 3.1-3.9 GHz.
- Saturated output power ranged from 40.4-41.1 dBm across the 3.2-3.6 GHz band.
- Measured saturated drain efficiency (DE) of 51-56.6% and 8 dB power back-off (PBO) DE of 45.5-48.6%.
Conclusions:
- The proposed Doherty PA module meets the demanding requirements for 5G massive MIMO base stations.
- The compact design and high efficiency demonstrate the viability of GaN technology for next-generation wireless infrastructure.
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