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Updated: May 23, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Enhancing built-in electric field via ZnIn2S4 nanosheet decorated with ZnS quantum dots photocatalyst for highly
Asif Hassan Raza1, Long Li1, Shumail Farhan1
1Faculty of Material Science and Chemistry, China University of Geosciences, 68 Jincheng Street, Wuhan 430078, China.
Abstract:
Two dimensional (2D) photocatalytic materials are desirable to achieve synergistic charge transfer and segregation. Here, we have developed 2D ZnIn2S4 nanosheet (3-4 nm) that generates more active sites for excellent photocatalytic activity. Further, we have fabricated ZnS quantum dots (QDs) and ZnS nanoparticles (NPs) embedded with ZnIn2S4 nanosheet in the form of ZnS QDs/ZnIn2S4 and ZnS NPs/ZnIn2S4 heterostructures prepared via one step hydrothermal method. The optimal ZnS QDs/ZnIn2S4 presents the hydrogen evolution rate (HER) of 4.5 mmol g-1 h-1 which was approximately 5 and 34 times higher than that of their counterparts as well as about 3 times more efficient than ZnS NPs/ZnIn2S4 heterostructure. The apparent quantum efficiency (AQE) of 21.2% was observed at 350 nm. The work functions determined through Ultraviolet photoelectron spectroscopy (UPS) elaborate the charge transfer mechanism. In situ KPFM validated the surface potential difference between the ZnS QDs and ZnIn2S4 interfaces estimated about 55 mV which was approximately 2 times higher than ZnS NPs/ZnIn2S4. Theoretical calculation confirms the significant reduction in Gibbs free energy about -0.6 eV. Electron paramagnetic resonance (EPR) spectra suggest the development of a novel S-scheme mechanism and provides a unique insight into the charge transfer, separation and the surface photovoltage of heterostructure photocatalysts.
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