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Simultaneous AoLP and DoLP Detection in a Bias-Switchable PdSe2/MoS2/PdSe2 Heterojunction for Polarization
Xiaofei Ma1,2, Zeping Wang2,3, Qinggang Qin4
1Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
Abstract:
On-chip polarized photodetectors play a crucial role in advancing ultra-compact optoelectronic devices for next-generation technologies. However, simultaneously detecting the angle of linear polarization (AoLP) and the degree of linear polarization (DoLP) within a single device remains a challenging task, particularly due to the inherently weak polarization states found in naturally anisotropic materials. In this paper, it is reported on the development of a twisted monopole barrier photodetector based on a PdSe2/MoS2/PdSe2 configuration. This photodetector features a rapid response time of 7-12 µs. In an imaging demonstration, it operates as a single-polarization photodetector, reconstructing AoLP and DoLP distributions of target objects through bias-switchable polarization detection across a wide spectral range, all without the plasmonic/metasurface nanostructures or polarization filters. Additionally, it demonstrates bipolar characteristics under zero-bias conditions at room temperature, enabling dual-binary coding for polarimetric-encoded communication. These combination of features positions the photodetector as a highly promising candidate for on-chip applications.
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