Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

272
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
272
Ferromagnetism01:31

Ferromagnetism

2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
Fermi Level Dynamics01:12

Fermi Level Dynamics

214
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
214
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

258
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
258
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

185
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
185
Field Effect Transistor01:29

Field Effect Transistor

273
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
273

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Strain and Defect-Tailored Magnetotransport in NiCo<sub>2</sub>O<sub>4</sub> Thin Films and Freestanding Membranes.

ACS nano·2026
Same author

Ultrafast dynamics of ferroelectric polarization of NbOI<sub>2</sub> captured with femtosecond electron diffraction.

Nature communications·2025
Same author

Emergence of a metallic surface state for narrow bandgap Mott insulator Sr<sub>3</sub>Ir<sub>2</sub>O<sub>7</sub>(001) thin films.

Journal of physics. Condensed matter : an Institute of Physics journal·2025
Same author

The anomalous temperature dependent low energy electron diffraction intensity at epitaxial Sr<sub>3</sub>Ir<sub>2</sub>O<sub>7</sub>thin film surfaces.

Journal of physics. Condensed matter : an Institute of Physics journal·2025
Same author

Correction to "Enabling Fast Photoresponse in Hybrid Perovskite/MoS<sub>2</sub> Photodetectors by Separating Local Photocharge Generation and Recombination".

Nano letters·2024
Same author

Giant Modulation of Second-Harmonic Generation in CuInP<sub>2</sub>S<sub>6</sub> by Interfacing with MoS<sub>2</sub> Atomic Layers.

ACS nano·2024
Same journal

Inhibiting selenium loss in sodium-selenium batteries <i>via</i> a Lewis acid-base dual-site host.

Chemical communications (Cambridge, England)·2026
Same journal

Switching cation selectivity <i>via</i> steric tuning in sumanene-based receptors.

Chemical communications (Cambridge, England)·2026
Same journal

Electrostatically polarized hydrogen-bonded organic frameworks for high-efficiency gold recovery from acidic electronic waste leachates.

Chemical communications (Cambridge, England)·2026
Same journal

Highly sensitive and wide-range non-contact fluorescent thermometry based on well-defined Cs<sub>2</sub>ZrCl<sub>6</sub>:Bi perovskite nanocrystals.

Chemical communications (Cambridge, England)·2026
Same journal

Effect of aluminum distribution in ZSM-22 zeolite on ethylene oligomerization.

Chemical communications (Cambridge, England)·2026
Same journal

Interfacial microenvironment engineering in CO<sub>2</sub> electroreduction: mechanisms, advances, and perspectives.

Chemical communications (Cambridge, England)·2026
See all related articles

Related Experiment Video

Updated: May 23, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.4K

Interface phenomena and emerging functionalities in ferroelectric oxide based heterostructures.

Yifei Hao1, Tianlin Li1, Xia Hong1

  • 1Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA. xia.hong@unl.edu.

Chemical Communications (Cambridge, England)
|March 10, 2025
PubMed
Summary
This summary is machine-generated.

Ferroelectric perovskite oxides enable novel electronics and nanophotonics through interfacial coupling. This review explores heterostructures, emergent phenomena, and applications in memory and optical devices.

More Related Videos

Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

9.9K
Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
09:45

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

12.3K

Related Experiment Videos

Last Updated: May 23, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.4K
Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

9.9K
Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
09:45

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

12.3K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid-State Chemistry

Background:

  • Ferroelectric perovskite oxides offer nonvolatile, nanoscale polarization control.
  • Their properties are tunable via interfacial coupling in heterostructures.
  • Thin films and membranes exhibit instability sensitive to boundary conditions.

Purpose of the Study:

  • To review ferroelectric oxide-based heterostructures, focusing on epitaxial and van der Waals interfaces.
  • To cover synthesis, characterization, and emergent phenomena in these systems.
  • To outline applications and future research directions in ferroelectric oxide heterostructures.

Main Methods:

  • Review of synthesis techniques for ferroelectric oxide thin films, membranes, and heterostructures.
  • Characterization of material properties and interfacial coupling effects.
  • Analysis of emergent phenomena and device applications.

Main Results:

  • Exploration of epitaxial perovskite oxide heterostructures and ferroelectric oxides interfaced with 2D van der Waals materials.
  • Discussion of phenomena like polarization-controlled metal-insulator transitions, negative capacitance, and programmable second harmonic generation.
  • Highlighting applications in nonvolatile memory, logic, and reconfigurable optical devices.

Conclusions:

  • Ferroelectric oxide heterostructures are promising for energy-efficient electronics and nanophotonics.
  • Interfacial engineering unlocks diverse emergent phenomena and device functionalities.
  • Future research directions include remote epitaxy, oxide moiré engineering, and topological property realization.