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Updated: May 23, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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Published on: April 12, 2018

All-electrical layer-spintronics in altermagnetic bilayers.

Rui Peng¹, Jin Yang^1,2, Lin Hu^3,4,5

¹Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design, Singapore, 487372, Singapore. rui_peng@sutd.edu.sg.

Materials Horizons

|March 11, 2025

Summary

This summary is machine-generated.

Researchers developed a new method for electrical control of spin-polarized current in altermagnetic bilayers. This layer-spintronics approach enables full reversal of spin polarization using electric fields, paving the way for advanced spintronic devices.

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Area of Science:

Condensed Matter Physics
Materials Science
Spintronics

Background:

Electrical control of spin-polarized current is crucial for spintronic devices.
Achieving this control efficiently and compactly remains a significant challenge.

Purpose of the Study:

To propose and demonstrate an all-electrical manipulation scheme for spin-polarized current.
To introduce the concept of layer-spintronics using altermagnetic bilayers.

Main Methods:

Utilizing first-principles calculations to investigate a CrS bilayer system.
Exploring the layer-spin locking mechanism enabled by an out-of-plane electric field.

Main Results:

Demonstrated gate-tunable spin-polarized current with full polarization reversal via electric field polarity.
Achieved sign-reversible spin polarization up to 87% at room temperature.
Identified a hidden layer-spin locking mechanism in a C-type antiferromagnetic CrS bilayer.

Conclusions:

The proposed layer-spintronics concept offers efficient electrical control of spin.
This approach synergizes altermagnetism and bilayer stacking for advanced spintronic applications.
The findings pave the way for ultracompact spintronic devices with electrical spin manipulation.