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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Self-Driven High-Performance Gate-Voltage-Tunable and Enhanced Performance Optoelectronic Device Based on FePS3/MoS2

Xiaoxiang Wu1, Cong Xiao2, Yu Wang1

  • 1School of Electrical Engineering, Tongling University, Tongling, Anhui 244000, People's Republic of China.

ACS Applied Materials & Interfaces
|March 12, 2025
PubMed

Keywords:
FePS3MoS2optoelectronic devicetwo-dimensional materialsvan der Waals heterojunction

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