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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field

Mengping Chen1, Yingliang Chen1, Guang Yang1

  • 1School of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China.

Nanomaterials (Basel, Switzerland)
|March 12, 2025
PubMed

Keywords:
graphene/hexagonal boron nitride heterojunctiontwist angletwo-photon absorptionvertical electric field

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