Related Experiment Video
Updated: May 22, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
A Z-Scheme Heterojunction g-C3N4/WO3 for Efficient Photodegradation of Tetracycline Hydrochloride and Rhodamine B
Yongxin Lu1, Shangjie Gao1, Teng Ma1
1Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.
Abstract:
The construction of heterojunctions can effectively inhibit the rapid recombination of photogenerated electrons and holes in photocatalysts and offers great potential for pollutant degradation. In this study, a Z-scheme heterojunction g-C3N4/WO3 photocatalyst was synthesized using a combination of hydrothermal and calcination methods. The photocatalytic degradation performance was tested under visible light; the degradation efficiency of Rh B reached 97.9% within 15 min and that of TC-HCl reached 93.3% within 180 min. The excellent photocatalytic performance of g-C3N4/WO3 composites can be attributed to the improved absorption of visible light, the increase in surface area, and the effective separation of photogenerated electron-hole pairs. In addition, after four cycles of experiments, the photocatalytic performance of g-C3N4/WO3 did not decrease obviously, remaining at 97.8%, which proved that the g-C3N4/WO3 heterojunction had high stability and reusability. The active radical capture experiment confirmed that h+ and ·O2- played a leading role in the photocatalytic degradation. The Z-scheme heterojunction g-C3N4/WO3 designed and synthesized in this study is expected to become an efficient photocatalyst suitable for environmental pollution control.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Zener Diodes
The Z-Scheme of Electron Transport in Photosynthesis

