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The Formation of an Interface and Its Energy Levels Inside a Band Gap in InAs/GaSb/AlSb/GaSb M-Structures

Paweł Śliż1, Dawid Jarosz1, Marta Pasternak1

  • 1Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, Al. Rejtana 16c, 35-959 Rzeszów, Poland.

Materials (Basel, Switzerland)
|March 13, 2025
PubMed

Keywords:
2D materialsDirac fermionsband gapcomputer simulationshigh resolution X-ray diffractioninfrared photodetectorsk·p perturbation theoryoptical absorption spectroscopysemiconductorssuperlattices

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