Related Experiment Video
Updated: May 22, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Proximity-Mediated Multi-Ferroelectric Coupling in Highly Strained EuO-Graphene Heterostructures
Satakshi Pandey1, Thomas Pin1, Simon Hettler2,3
1Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, Strasbourg, F-67000, France.
Abstract:
2D van der Waals materials and their heterostructures are a fantastic playground to explore emergent phenomena arising from electronic quantum hybridization effects. In the last decade, the spin-dependant hybridization effect pushed this frontier further introducing the magnetic proximity effect as a promising tool for spintronic applications. Here the uncharted proximity-controlled magnetoelectric effect in EuO/graphene heterostructure is unveiled. This is obtained while creating a new multiferroic hybrid heterostructure with multifunctional properties. Using a topotactic method magnetic insulating EuO thin films on graphene is grown under high compressive strain, which induces the appearance of an additional ferroelectric order, with an electric polarization that reaches up to 18 µC cm-2 at room temperature. This observation therefore quantitatively confirms the theoretical predictions made 15 years ago of a strain-induced ferroelectric state in EuO. Moreover, the EuO induces a magnetic proximity state into the graphene layer by interfacial hybridization. This new ferroelectric state in the EuO/graphene heterostructure is stable up to room temperature where it coexists with the EuO/graphene magnetic state. Furthermore, intertwined magneto-electric effects are shown in these strained heterostructures which can facilitate the manipulation of magnetization and electric polarization in future memory and neuromorphic devices.
Related Concept Videos
Ferromagnetism
¹H NMR: Long-Range Coupling
In alkenes, spin information is communicated via σ–π overlap, as seen in allylic (four-bond) and homoallylic (five-bond) couplings. These coupling interactions are stronger when the σ bond is parallel to the alkene...
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Elastic Strain Energy for Shearing Stresses

